Hua Hong in production on second gen 0.18 micron BCD

This new platform has a 40V DMOS breakdown voltage of up to 52V, and on-resistance as low as 20 mOhm.mm2, reaching leading process levels of the node which can improve the drive capability of products, reduce the size of chips, expand the safe-operation-area (SOA) of high-voltage tubes and ensure the high reliability of products.

The platform has a minimum of 18 mask layers, and offers a wide range of optional components including high-ohmic resistors, capacitors, Zener diodes, Schottky diodes, etc.

This platform also offers access to an in-house designed standard cell library, SRAM compiler, IO and eFuse, providing a complete design solution for power management chips.

The Company has verified and moved into mass produced chip products in various fields including motor drive, fast charging, communication, security, DC-DC and LDO, in close cooperation with its many customers at home and abroad.

With green technology, power management plays an important role. Hua Hong introduced a comprehensive power management (PMIC) BCD process solution and has a rich mass production experience at 0.5µm, 0.35µm and 0.18µm nodes.

The Company will continue to leverage its expertise in BCD and eNVM processes, integrating the two to create high-end power management SOCs for intelligent power products.