Hynix to ramp new $13.5bn NAND fab
The fab, designated M15 semiconductor is in Cheongju, North Chungcheong Province. It cost $13.5 billion.
First silicon will be 72-layer 3D NAND. Next year it will introduce 96-layer NAND to the production mix.
Samsung is building its second NAND fab in Xian, China with an investment of $7 billion.
Last month Toshiba opened Fab 6 in Yokkaichi to build NAND which cost $4.5 billion.