Tiny silicon capacitor for 10GHz frequencies

The silicon capacitor an be used for DC decoupling/DC noise and harmonic filtering in RF and microwave power applications up to 10GHz. 

These wire bondable vertical capacitors built in silicon trenches have been developed using a semiconductor process providing high capacitance density from 1.3nF/mm² to 250nF/mm². Breakdown voltage is respectively 450V to 11V).

The first device has 1nF capicatance in a 250µm (100µm on request) low profile 0101 SMT.

The capacitor is designed to be stable over the full operating DC voltage (< 0.02 %/V) & temperature ranges (± 0.5 % from -55 °C to +150 °C).

These capacitors also show very low dielectric absorption (0.05 %) and piezo effect.

The wire-bondable capacitors are RoHS and REACH compliant and are available with top and bottom gold metallisation.