FCH190N65F-F085

AMI Semiconductor / ON Semiconductor

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Product Overview

Part Number:	FCH190N65F-F085
Manufacturer/Brand:	AMI Semiconductor / ON Semiconductor
Product description	MOSFET N-CH 650V 20.6A TO247
Datasheets:	FCH190N65F-F085.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	14579 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 14579 pcs

Reference Price (In US Dollars)

1 pcs: $2.034

10 pcs: $1.817

450 pcs: $1.344

900 pcs: $1.09

1350 pcs: $1.017

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Specifications of FCH190N65F-F085

Part Number	FCH190N65F-F085	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 650V 20.6A TO247	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	14579 pcs	Data sheet	FCH190N65F-F085.pdf
Vgs(th) (Max) @ Id	5V @ 250µA	Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	TO-247
Series	Automotive, AEC-Q101, SuperFET® II	Rds On (Max) @ Id, Vgs	190 mOhm @ 27A, 10V
Power Dissipation (Max)	208W (Tc)	Packaging	Tube
Package / Case	TO-247-3	Other Names	FCH190N65F_F085 FCH190N65F_F085-ND
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	3181pF @ 25V	Gate Charge (Qg) (Max) @ Vgs	82nC @ 10V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	10V	Drain to Source Voltage (Vdss)	650V
Detailed Description	N-Channel 650V 20.6A (Tc) 208W (Tc) Through Hole TO-247	Current - Continuous Drain (Id) @ 25°C	20.6A (Tc)

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FCH190N65F-F085

Product Overview

Reference Price (In US Dollars)

Specifications of FCH190N65F-F085

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