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HomeProductsDiscrete Semiconductor ProductsTransistors - Bipolar (BJT) - ArraysHN3C51F-GR(TE85L,F

HN3C51F-GR(TE85L,F

Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
HN3C51F-GR(TE85L,F Image
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Product Overview

Part Number: HN3C51F-GR(TE85L,F
Manufacturer/Brand: Toshiba Semiconductor and Storage
Product description TRANS 2NPN 120V 0.1A SM6
Datasheets: HN3C51F-GR(TE85L,F.pdf
RoHs Status Lead free / RoHS Compliant
Stock Condition 3846 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 3846 pcs
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Specifications of HN3C51F-GR(TE85L,F

Part Number HN3C51F-GR(TE85L,F Manufacturer Toshiba Semiconductor and Storage
Description TRANS 2NPN 120V 0.1A SM6 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 3846 pcs Data sheet HN3C51F-GR(TE85L,F.pdf
Voltage - Collector Emitter Breakdown (Max) 120V Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Transistor Type 2 NPN (Dual) Supplier Device Package SM6
Series - Power - Max 300mW
Packaging Original-Reel® Package / Case SC-74, SOT-457
Other Names HN3C51F-GR(TE85LF)DKR
HN3C51F-GR(TE85LF)DKR-ND
HN3C51F-GR(TE85LFDKR		 Operating Temperature 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 100MHz
Detailed Description Bipolar (BJT) Transistor Array 2 NPN (Dual) 120V 100mA 100MHz 300mW Surface Mount SM6 DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
Current - Collector Cutoff (Max) 100nA (ICBO) Current - Collector (Ic) (Max) 100mA

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