Part Number | TK1K9A60F,S4X | Manufacturer | Toshiba Semiconductor and Storage |
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Description | PB-F POWER MOSFET TRANSISTOR TO- | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 95802 pcs | Data sheet | TK1K9A60F,S4X.pdf |
Vgs(th) (Max) @ Id | 4V @ 400µA | Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) | Supplier Device Package | TO-220SIS |
Series | U-MOSIX | Rds On (Max) @ Id, Vgs | 1.9 Ohm @ 1.9A, 10V |
Power Dissipation (Max) | 30W (Tc) | Packaging | Tube |
Package / Case | TO-220-3 Full Pack | Other Names | TK1K9A60F,S4X(S TK1K9A60FS4X TK1K9A60FS4X(S |
Operating Temperature | 150°C | Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | Not Applicable | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 490pF @ 300V | Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
FET Type | N-Channel | FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Drain to Source Voltage (Vdss) | 600V |
Detailed Description | N-Channel 600V 3.7A (Ta) 30W (Tc) Through Hole TO-220SIS | Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) |
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