Part Number | TK31N60W5,S1VF | Manufacturer | Toshiba Semiconductor and Storage |
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Description | MOSFET N-CH 600V 30.8A TO-247 | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 12577 pcs | Data sheet | TK31N60W5,S1VF.pdf |
Vgs(th) (Max) @ Id | 4.5V @ 1.5mA | Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) | Supplier Device Package | TO-247 |
Series | DTMOSIV | Rds On (Max) @ Id, Vgs | 99 mOhm @ 15.4A, 10V |
Power Dissipation (Max) | 230W (Tc) | Packaging | Tube |
Package / Case | TO-247-3 | Other Names | TK31N60W5,S1VF(S TK31N60W5,S1VF-ND TK31N60W5S1VF |
Operating Temperature | 150°C (TJ) | Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 300V | Gate Charge (Qg) (Max) @ Vgs | 105nC @ 10V |
FET Type | N-Channel | FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Drain to Source Voltage (Vdss) | 600V |
Detailed Description | N-Channel 600V 30.8A (Ta) 230W (Tc) Through Hole TO-247 | Current - Continuous Drain (Id) @ 25°C | 30.8A (Ta) |
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