TK4A53D(STA4,Q,M)

Toshiba Semiconductor and Storage

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Product Overview

Part Number:	TK4A53D(STA4,Q,M)
Manufacturer/Brand:	Toshiba Semiconductor and Storage
Product description	MOSFET N-CH 525V 4A TO-220SIS
Datasheets:	1.TK4A53D(STA4,Q,M).pdf 2.TK4A53D(STA4,Q,M).pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	6775 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 6775 pcs

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Specifications of TK4A53D(STA4,Q,M)

Part Number	TK4A53D(STA4,Q,M)	Manufacturer	Toshiba Semiconductor and Storage
Description	MOSFET N-CH 525V 4A TO-220SIS	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	6775 pcs	Data sheet	1.TK4A53D(STA4,Q,M).pdf 2.TK4A53D(STA4,Q,M).pdf
Vgs(th) (Max) @ Id	4.4V @ 1mA	Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	TO-220SIS
Series	π-MOSVII	Rds On (Max) @ Id, Vgs	1.7 Ohm @ 2A, 10V
Power Dissipation (Max)	35W (Tc)	Packaging	Tube
Package / Case	TO-220-3 Full Pack	Other Names	TK4A53D(STA4QM) TK4A53DSTA4QM
Operating Temperature	150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	490pF @ 25V	Gate Charge (Qg) (Max) @ Vgs	11nC @ 10V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	10V	Drain to Source Voltage (Vdss)	525V
Detailed Description	N-Channel 525V 4A (Ta) 35W (Tc) Through Hole TO-220SIS	Current - Continuous Drain (Id) @ 25°C	4A (Ta)

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TK4A53D(STA4,Q,M)

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Specifications of TK4A53D(STA4,Q,M)

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