FDI045N10A-F102

AMI Semiconductor / ON Semiconductor

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Product Overview

Part Number:	FDI045N10A-F102
Manufacturer/Brand:	AMI Semiconductor / ON Semiconductor
Product description	MOSFET N-CH 100V 120A I2PAK-3
Datasheets:	FDI045N10A-F102.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	17240 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 17240 pcs

Reference Price (In US Dollars)

1 pcs: $1.696

10 pcs: $1.515

100 pcs: $1.242

500 pcs: $1.006

1000 pcs: $0.848

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Specifications of FDI045N10A-F102

Part Number	FDI045N10A-F102	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 100V 120A I2PAK-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	17240 pcs	Data sheet	FDI045N10A-F102.pdf
Vgs(th) (Max) @ Id	4V @ 250µA	Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	I2PAK (TO-262)
Series	PowerTrench®	Rds On (Max) @ Id, Vgs	4.5 mOhm @ 100A, 10V
Power Dissipation (Max)	263W (Tc)	Packaging	Tube
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA	Other Names	FDI045N10A_F102 FDI045N10A_F102-ND
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	5270pF @ 50V	Gate Charge (Qg) (Max) @ Vgs	74nC @ 10V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	10V	Drain to Source Voltage (Vdss)	100V
Detailed Description	N-Channel 100V 120A (Tc) 263W (Tc) Through Hole I2PAK (TO-262)	Current - Continuous Drain (Id) @ 25°C	120A (Tc)

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FDI045N10A-F102

Product Overview

Reference Price (In US Dollars)

Specifications of FDI045N10A-F102

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AFTER-SALES GUARANTEE

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