Part Number | FQA9N90C-F109 | Manufacturer | AMI Semiconductor / ON Semiconductor |
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Description | MOSFET N-CH 900V 9A TO-3P | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 26303 pcs | Data sheet | FQA9N90C-F109.pdf |
Vgs(th) (Max) @ Id | 5V @ 250µA | Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) | Supplier Device Package | TO-3PN |
Series | QFET® | Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 4.5A, 10V |
Power Dissipation (Max) | 280W (Tc) | Packaging | Tube |
Package / Case | TO-3P-3, SC-65-3 | Other Names | FQA9N90C_F109 FQA9N90C_F109-ND FQA9N90CF109 |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 2730pF @ 25V | Gate Charge (Qg) (Max) @ Vgs | 58nC @ 10V |
FET Type | N-Channel | FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Drain to Source Voltage (Vdss) | 900V |
Detailed Description | N-Channel 900V 9A (Tc) 280W (Tc) Through Hole TO-3PN | Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
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