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HomeProductsDiscrete Semiconductor ProductsTransistors - Bipolar (BJT) - Arrays, Pre-BiasedIMB1AT110

IMB1AT110

LAPIS SemiconductorLAPIS Semiconductor
LAPIS Semiconductor
Image may be representation. See specifications for product details.

Product Overview

Part Number: IMB1AT110
Manufacturer/Brand: LAPIS Semiconductor
Product description TRANS PREBIAS DUAL PNP SMT6
Datasheets: IMB1AT110.pdf
RoHs Status Lead free / RoHS Compliant
Stock Condition 954869 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 954869 pcs
Reference Price (In US Dollars)
3000 pcs
$0.032
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Specifications of IMB1AT110

Part Number IMB1AT110 Manufacturer LAPIS Semiconductor
Description TRANS PREBIAS DUAL PNP SMT6 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 954869 pcs Data sheet IMB1AT110.pdf
Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Transistor Type 2 PNP - Pre-Biased (Dual) Supplier Device Package SMT6
Series - Resistor - Emitter Base (R2) 22 kOhms
Resistor - Base (R1) 22 kOhms Power - Max 300mW
Packaging Tape & Reel (TR) Package / Case SC-74, SOT-457
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition -
Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SMT6 DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 5mA, 5V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 100mA
Base Part Number MB1

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