TPH2900ENH,L1Q

Toshiba Semiconductor and Storage

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Product Overview

Part Number:	TPH2900ENH,L1Q
Manufacturer/Brand:	Toshiba Semiconductor and Storage
Product description	MOSFET N-CH 200V 33A SOP8
Datasheets:	TPH2900ENH,L1Q.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	93748 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 93748 pcs

Reference Price (In US Dollars)

5000 pcs: $0.398

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Specifications of TPH2900ENH,L1Q

Part Number	TPH2900ENH,L1Q	Manufacturer	Toshiba Semiconductor and Storage
Description	MOSFET N-CH 200V 33A SOP8	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	93748 pcs	Data sheet	TPH2900ENH,L1Q.pdf
Vgs(th) (Max) @ Id	4V @ 1mA	Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	8-SOP Advance (5x5)
Series	U-MOSVIII-H	Rds On (Max) @ Id, Vgs	29 mOhm @ 16.5A, 10V
Power Dissipation (Max)	78W (Tc)	Packaging	Tape & Reel (TR)
Package / Case	8-PowerVDFN	Other Names	TPH2900ENH,L1Q(M TPH2900ENHL1QTR
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	2200pF @ 100V	Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	10V	Drain to Source Voltage (Vdss)	200V
Detailed Description	N-Channel 200V 33A (Ta) 78W (Tc) Surface Mount 8-SOP Advance (5x5)	Current - Continuous Drain (Id) @ 25°C	33A (Ta)

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TPH2900ENH,L1Q

Product Overview

Reference Price (In US Dollars)

Specifications of TPH2900ENH,L1Q

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