NXP adds to LDMOS RF power transistors

With more power density, a lower current level and wider safety margins than previous RF power solutions, 65 V LDMOS enables more integrated and reliable Industry 4.0 systems.

The MRFX series of 65 V LDMOS devices targets industrial, scientific and medical (ISM) applications such as laser generation, plasma processing, magnetic-resonance imaging, skin treatment and diathermy, as well as the growing segment of RF Energy where transistors replace vacuum tubes in industrial heating machines.

They are also designed for radio and TV broadcast transmitters.

65 V LDMOS made its debut last year with the MRFX1K80H device, capable of 1800 W CW (continuous wave) in an air-cavity ceramic package.

Many new reference circuits for the MRFX1K80H have since been designed, enabling RF designers to jump-start their development at 27, 64, 81.36, 87.5-108, 128, 175, 174-230 and 230 megahertz (MHz).