FQE10N20CTU

AMI Semiconductor / ON Semiconductor

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Product Overview

Part Number:	FQE10N20CTU
Manufacturer/Brand:	AMI Semiconductor / ON Semiconductor
Product description	MOSFET N-CH 200V 4A TO-126
Datasheets:	FQE10N20CTU.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	4459 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 4459 pcs

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Specifications of FQE10N20CTU

Part Number	FQE10N20CTU	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 200V 4A TO-126	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4459 pcs	Data sheet	FQE10N20CTU.pdf
Vgs(th) (Max) @ Id	4V @ 250µA	Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	TO-126
Series	QFET®	Rds On (Max) @ Id, Vgs	360 mOhm @ 2A, 10V
Power Dissipation (Max)	12.8W (Tc)	Packaging	Tube
Package / Case	TO-225AA, TO-126-3	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	510pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	26nC @ 10V	FET Type	N-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	10V
Drain to Source Voltage (Vdss)	200V	Detailed Description	N-Channel 200V 4A (Tc) 12.8W (Tc) Through Hole TO-126
Current - Continuous Drain (Id) @ 25°C	4A (Tc)

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FQE10N20CTU

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