MTY100N10E

AMI Semiconductor / ON Semiconductor

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Product Overview

Part Number:	MTY100N10E
Manufacturer/Brand:	AMI Semiconductor / ON Semiconductor
Product description	MOSFET N-CH 100V 100A TO-264
Datasheets:	MTY100N10E.pdf
RoHs Status	Contains lead / RoHS non-compliant
Stock Condition	4182 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 4182 pcs

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Specifications of MTY100N10E

Part Number	MTY100N10E	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 100V 100A TO-264	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	4182 pcs	Data sheet	MTY100N10E.pdf
Vgs(th) (Max) @ Id	4V @ 250µA	Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	TO-264
Series	-	Rds On (Max) @ Id, Vgs	11 mOhm @ 50A, 10V
Power Dissipation (Max)	300W (Tc)	Packaging	Tube
Package / Case	TO-264-3, TO-264AA	Other Names	MTY100N10EOS
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds	10640pF @ 25V	Gate Charge (Qg) (Max) @ Vgs	378nC @ 10V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	10V	Drain to Source Voltage (Vdss)	100V
Detailed Description	N-Channel 100V 100A (Tc) 300W (Tc) Through Hole TO-264	Current - Continuous Drain (Id) @ 25°C	100A (Tc)

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MTY100N10E

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Specifications of MTY100N10E

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