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HomeProductsDiscrete Semiconductor ProductsTransistors - Bipolar (BJT) - ArraysNJX1675PDR2G

NJX1675PDR2G

AMI Semiconductor / ON SemiconductorAMI Semiconductor / ON Semiconductor
AMI Semiconductor / ON Semiconductor
Image may be representation. See specifications for product details.

Product Overview

Part Number: NJX1675PDR2G
Manufacturer/Brand: AMI Semiconductor / ON Semiconductor
Product description TRANS NPN/PNP 30V 3A 8SOIC
Datasheets: NJX1675PDR2G.pdf
RoHs Status Lead free / RoHS Compliant
Stock Condition 3809 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 3809 pcs
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Specifications of NJX1675PDR2G

Part Number NJX1675PDR2G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN/PNP 30V 3A 8SOIC Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 3809 pcs Data sheet NJX1675PDR2G.pdf
Voltage - Collector Emitter Breakdown (Max) 30V Vce Saturation (Max) @ Ib, Ic 115mV @ 200mA, 2A, 170mV @ 200mA, 2A
Transistor Type NPN, PNP Supplier Device Package 8-SOIC
Series - Power - Max 2W
Packaging Tape & Reel (TR) Package / Case 8-SOIC (0.154", 3.90mm Width)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 100MHz, 120MHz Detailed Description Bipolar (BJT) Transistor Array NPN, PNP 30V 3A 100MHz, 120MHz 2W Surface Mount 8-SOIC
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 1A, 2V Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 3A

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