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HomeProductsDiscrete Semiconductor ProductsDiodes - Rectifiers - SingleDLN10C-BT

DLN10C-BT

ON SemiconductorON Semiconductor
DLN10C-BT Image
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Product Overview

Part Number: DLN10C-BT
Manufacturer/Brand: AMI Semiconductor / ON Semiconductor
Product description DIODE GEN PURP 200V 1A AXIAL
Datasheets: DLN10C-BT.pdf
RoHs Status Lead free / RoHS Compliant
Stock Condition 4476 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 4476 pcs
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Specifications of DLN10C-BT

Part Number DLN10C-BT Manufacturer ON Semiconductor
Description DIODE GEN PURP 200V 1A AXIAL Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4476 pcs Data sheet DLN10C-BT.pdf
Voltage - Peak Reverse (Max) Standard Voltage - Forward (Vf) (Max) @ If 1A
Voltage - Breakdown - Series -
RoHS Status Tape & Reel (TR) Reverse Recovery Time (trr) Fast Recovery = 200mA (Io)
Resistance @ If, F - Polarization R-1 (Axial)
Operating Temperature - Junction 35ns Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Part Number DLN10C-BT
Expanded Description Diode Standard 200V 1A Through Hole Diode Configuration 10µA @ 200V
Description DIODE GEN PURP 200V 1A AXIAL Current - Reverse Leakage @ Vr 980mV @ 1A
Current - Average Rectified (Io) (per Diode) 200V Capacitance @ Vr, F 150°C (Max)

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