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TJ80S04M3L(T6L1,NQ

Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
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Product Overview

Part Number: TJ80S04M3L(T6L1,NQ
Manufacturer/Brand: Toshiba Semiconductor and Storage
Product description MOSFET P-CH 40V 80A DPAK-3
Datasheets: 1.TJ80S04M3L(T6L1,NQ.pdf2.TJ80S04M3L(T6L1,NQ.pdf
RoHs Status Lead free / RoHS Compliant
Stock Condition 95613 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 95613 pcs
Reference Price (In US Dollars)
2000 pcs
$0.354
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Specifications of TJ80S04M3L(T6L1,NQ

Part Number TJ80S04M3L(T6L1,NQ Manufacturer Toshiba Semiconductor and Storage
Description MOSFET P-CH 40V 80A DPAK-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 95613 pcs Data sheet 1.TJ80S04M3L(T6L1,NQ.pdf2.TJ80S04M3L(T6L1,NQ.pdf
Vgs(th) (Max) @ Id 3V @ 1mA Vgs (Max) +10V, -20V
Technology MOSFET (Metal Oxide) Supplier Device Package DPAK+
Series U-MOSVI Rds On (Max) @ Id, Vgs 5.2 mOhm @ 40A, 10V
Power Dissipation (Max) 100W (Tc) Packaging Tape & Reel (TR)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Other Names TJ80S04M3L(T6L1NQ
TJ80S04M3LT6L1NQ
Operating Temperature 175°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 7770pF @ 10V Gate Charge (Qg) (Max) @ Vgs 158nC @ 10V
FET Type P-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Drain to Source Voltage (Vdss) 40V
Detailed Description P-Channel 40V 80A (Ta) 100W (Tc) Surface Mount DPAK+ Current - Continuous Drain (Id) @ 25°C 80A (Ta)

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